FURI | Spring 2023

Ultrawide Bandgap Material for Our Future Power Electronics

To pursue technology like AI, curtail power losses, and combat global warming, it is imperative to transition from silicon devices to ultrawide bandgap (ex AlN or Ga2O3) devices. This project explores solutions to help make this transition and build a better energy future. The aim of this project is to help solve challenges inhibiting ultrawide bandgap semiconductor material system integration including doping efficiency, and difficulty in growing high-quality crystals. The process to do so entails: proposing semiconductor diode structures, simulating their expected behavior online, growing the device at ASU, and finally testing the device and comparing performance with expected outcomes.